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| PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application * Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz) * For 3.5 V nominal battery use Features * * * * * 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 x 13.75 x 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current Symbol Vdd Idd GSM Idd DCS Vtxlo voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Vtxlo Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8 3 2 4 4 10 -30 to +100 -30 to +100 5 3 Unit V A A V V dBm C C W W Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz). PF08109B Electrical Characteristics for DC (Tc = 25C) Item Drain cutoff current Vapc control current Vtxlo control current Symbol Ids Iapc Itxlo Min -- -- -- Typ -- -- -- Max 100 3 100 Unit A mA A Test Condition Vdd = 8 V, Vapc = 0 V Vapc =2.2 V Vtxlo = 2.4 V Electrical Characteristics for E-GSM mode (Tc = 25C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 , Tc = 25C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used. Item Frequency range Total efficiency (Hi) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Total efficiency (Lo) Output power (1)(Hi) Output power (1)(Lo) Output power (2)(Hi) Output power (2)(Lo) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f T(Hi) 2nd H.D. 3rd H.D. VSWR (in) T(Lo) Pout (1)(Hi) Pout (1)(Lo) Pout (2)(Hi) Pout (2)(Lo) -- -- tr, t f -- Min 880 41 -- -- -- 27 35.5 30.8 33.5 28.8 -- -- -- Typ -- 50 -45 -45 1.5 35 36.0 31.3 34.0 29.3 -42 -23 1 Max 915 -- -38 -40 3 -- -- -- -- -- -36 -17 2 Unit MHz % dBc dBc -- % dBm dBm dBm dBm dBm dBm s -- Pout GSM = 30.8dBm, Vtxlo = 2.4V, Vapc GSM = controlled Vapc GSM = 2.2V, Vtxlo = 0.1V Vapc GSM = 2.2V, Vtxlo = 2.4V Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85C, Vtxlo = 0.1V Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85C, Vtxlo = 2.4V Vapc GSM = 0.2V, Vtxlo = 0.1V Pout GSM = 35.5dBm, Vtxlo = 0.1V Measured at f = 1760 to 1830MHz Pout GSM Test Condition Pout GSM = 35.5dBm, Vtxlo = 0.1V, Vapc GSM = controlled = 0 to 35.5dBm, Vtxlo = 0.1V No parasitic oscillation Vdd GSM = 3.0 to 5.1V, Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSMpulse. Rg = 50, Output VSWR = 6 : 1 All phases Vdd GSM = 3.0 to 5.1V, t = 20sec., Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSM pulse. Rg = 50, Output VSWR = 10 : 1 All phases Load VSWR tolerance -- No degradation -- 2 PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 , Tc = 25C, Vapc GSM =0.1 V Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used. Item Frequency range Total efficiency (Hi) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Total efficiency (Lo) Output power (1) Output power (2) Isolation Isolation at GSM RF-output when DCS is active Switching time Stability Symbol f T(Hi) 2nd H.D. 3rd H.D. VSWR (in) T(Lo) Pout (1) Pout (2) -- -- tr, t f -- Min 1710 36 -- -- -- 17 32.7 30.7 -- -- -- Typ -- 43 -45 -45 1.5 25 33.2 31.2 -42 -10 1 Max 1785 -- -38 -40 3 -- -- -- -36 0 2 Unit MHz % dBc dBc -- % dBm dBm dBm dBm s -- Pout DCS = 26.7dBm, Vapc DCS = controlled Vapc DCS = 2.2V, Vdd DCS = 3.0V, Vapc DCS = 2.2V, Tc = +85C Vapc DCS = 0.2V Pout DCS = 32.7dBm, Measured at f = 1710 to 1785MHz Pout DCS Test Condition Pout DCS = 32.7dBm, Vapc DCS = controlled = 0 to 32.7dBm No parasitic oscillation Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 6 : 1 All phases Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, t = 20sec., Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 10 : 1 All phases Load VSWR tolerance -- No degradation -- 3 PF08109B Package Dimensions Unit: mm 1.8 0.2 8 9 11.0 0.3 10 (10.8) G 11 12 1 G 2 (Upper side) G 7 6 11.0 0.3 5 G 4 3 7 8G 9 10 G 11 12 6 5 G 4 3 13.75 0.3 13.75 0.3 (3.3) (1.4) (1.4) (1.2) 1G 2 (3.3) (1.0) (1.4) (1.0) (1.0) (1.0) (3.4) (0.8) (1.4) (1.0) (1.4) 11.0 0.3 (2.4) (2.4) (0.8) (2.8) (2.6) (0.8) (2.6) (1.45) (1.1) (3.7) (2.5) (3.7) (2.5) (1.2) (1.0) (1.0) (4.6) (1.4) (4.6) (Bottom side) Hitachi Code JEDEC EIAJ Mass (reference value) RF-O-12 -- -- -- 4 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://www.hitachi.com.sg/grp3/sicd http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3rd Flr, Hung Kuo Building, No.167, Tun Hwa North Road, Taipei (105) Taiwan Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Telex: 23222 HAS-TP Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7th Flr, North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 1.0 |
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